Tehnilised dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
138 A
Maximum Drain Source Voltage
650 V
Series
MDmesh
Package Type
Max247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
15 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
625 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Number of Elements per Chip
1
Width
5.3mm
Length
15.9mm
Typical Gate Charge @ Vgs
414 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Height
20.3mm
Forward Diode Voltage
1.5V
Päritoluriik
China
Toote üksikasjad
N-Channel MDmesh™, 600V/650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
€ 1 023,00
€ 34,10 tk (torus 30) (ilma käibemaksuta)
€ 1 268,52
€ 42,284 tk (torus 30) (koos käibemaksuga)
30
€ 1 023,00
€ 34,10 tk (torus 30) (ilma käibemaksuta)
€ 1 268,52
€ 42,284 tk (torus 30) (koos käibemaksuga)
30
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
138 A
Maximum Drain Source Voltage
650 V
Series
MDmesh
Package Type
Max247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
15 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
625 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Number of Elements per Chip
1
Width
5.3mm
Length
15.9mm
Typical Gate Charge @ Vgs
414 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Height
20.3mm
Forward Diode Voltage
1.5V
Päritoluriik
China
Toote üksikasjad