Tehnilised dokumendid
Spetsifikatsioonid:
Brand
Taiwan SemiconductorChannel Type
N
Maximum Continuous Drain Current
23 A
Maximum Drain Source Voltage
60 V
Package Type
SOP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
15 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
12.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Typical Gate Charge @ Vgs
19 nC @ 4.5 V, 37 nC @ 10 V
Maximum Operating Temperature
+150 °C
Length
4.85mm
Width
3.9mm
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Height
1.55mm
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 0,607
tk (rullis 2500) (ilma käibemaksuta)
€ 0,741
tk (rullis 2500) (koos käibemaksuga)
2500
€ 0,607
tk (rullis 2500) (ilma käibemaksuta)
€ 0,741
tk (rullis 2500) (koos käibemaksuga)
2500
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
Taiwan SemiconductorChannel Type
N
Maximum Continuous Drain Current
23 A
Maximum Drain Source Voltage
60 V
Package Type
SOP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
15 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
12.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Typical Gate Charge @ Vgs
19 nC @ 4.5 V, 37 nC @ 10 V
Maximum Operating Temperature
+150 °C
Length
4.85mm
Width
3.9mm
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Height
1.55mm