N-Channel MOSFET, 30 mA, 600 V Depletion, 3-Pin SOT-23 Taiwan Semi TSM126CX RFG

RS tootekood: 171-3612Bränd: Taiwan SemiconductorTootja Part nr.: TSM126CX RFG
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Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

30 mA

Maximum Drain Source Voltage

600 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

800 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

2.7V

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Maximum Operating Temperature

+150 °C

Length

2.9mm

Typical Gate Charge @ Vgs

1.18 nC @ 5 V

Width

1.6mm

Number of Elements per Chip

1

Forward Diode Voltage

1.2V

Minimum Operating Temperature

-55 °C

Height

1.1mm

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Lao andmed ajutiselt ei ole saadaval.

Palun kontrollige hiljem uuesti.

Lao andmed ajutiselt ei ole saadaval.

€ 0,203

tk (rullis 3000) (ilma käibemaksuta)

€ 0,248

tk (rullis 3000) (koos käibemaksuga)

N-Channel MOSFET, 30 mA, 600 V Depletion, 3-Pin SOT-23 Taiwan Semi TSM126CX RFG

€ 0,203

tk (rullis 3000) (ilma käibemaksuta)

€ 0,248

tk (rullis 3000) (koos käibemaksuga)

N-Channel MOSFET, 30 mA, 600 V Depletion, 3-Pin SOT-23 Taiwan Semi TSM126CX RFG
Lao andmed ajutiselt ei ole saadaval.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

30 mA

Maximum Drain Source Voltage

600 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

800 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

2.7V

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Maximum Operating Temperature

+150 °C

Length

2.9mm

Typical Gate Charge @ Vgs

1.18 nC @ 5 V

Width

1.6mm

Number of Elements per Chip

1

Forward Diode Voltage

1.2V

Minimum Operating Temperature

-55 °C

Height

1.1mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more