Tehnilised dokumendid
Spetsifikatsioonid:
Brand
Taiwan SemiconductorChannel Type
N
Maximum Continuous Drain Current
30 mA
Maximum Drain Source Voltage
600 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
800 Ω
Channel Mode
Depletion
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
2.7V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Maximum Operating Temperature
+150 °C
Length
2.9mm
Typical Gate Charge @ Vgs
1.18 nC @ 5 V
Width
1.6mm
Number of Elements per Chip
1
Forward Diode Voltage
1.2V
Minimum Operating Temperature
-55 °C
Height
1.1mm
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 0,203
tk (rullis 3000) (ilma käibemaksuta)
€ 0,248
tk (rullis 3000) (koos käibemaksuga)
3000
€ 0,203
tk (rullis 3000) (ilma käibemaksuta)
€ 0,248
tk (rullis 3000) (koos käibemaksuga)
3000
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
Taiwan SemiconductorChannel Type
N
Maximum Continuous Drain Current
30 mA
Maximum Drain Source Voltage
600 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
800 Ω
Channel Mode
Depletion
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
2.7V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Maximum Operating Temperature
+150 °C
Length
2.9mm
Typical Gate Charge @ Vgs
1.18 nC @ 5 V
Width
1.6mm
Number of Elements per Chip
1
Forward Diode Voltage
1.2V
Minimum Operating Temperature
-55 °C
Height
1.1mm