Taiwan Semi P-Channel MOSFET, 3 A, 30 V, 3-Pin SOT-23 TSM2307CX RFG

RS tootekood: 743-6030Bränd: Taiwan SemiconductorTootja Part nr.: TSM2307CX RFG
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Kuva kõik kategoorias MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

P

Maximum Continuous Drain Current

3 A

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

140 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Maximum Power Dissipation

1.25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Length

3.1mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

10 nC @ 10 V

Width

1.7mm

Height

1.2mm

Minimum Operating Temperature

-55 °C

Toote üksikasjad

P-Channel Power MOSFET, Taiwan Semiconductor

MOSFET Transistors, Taiwan Semiconductor

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€ 6,58

€ 0,263 tk (pakis 25) (ilma käibemaksuta)

€ 8,16

€ 0,326 tk (pakis 25) (koos käibemaksuga)

Taiwan Semi P-Channel MOSFET, 3 A, 30 V, 3-Pin SOT-23 TSM2307CX RFG
Valige pakendi tüüp

€ 6,58

€ 0,263 tk (pakis 25) (ilma käibemaksuta)

€ 8,16

€ 0,326 tk (pakis 25) (koos käibemaksuga)

Taiwan Semi P-Channel MOSFET, 3 A, 30 V, 3-Pin SOT-23 TSM2307CX RFG

Lao andmed ajutiselt ei ole saadaval.

Valige pakendi tüüp

Lao andmed ajutiselt ei ole saadaval.

kogusÜhikuhindPer Pakend
25 - 225€ 0,263€ 6,58
250 - 475€ 0,221€ 5,52
500+€ 0,214€ 5,35

Ideate. Create. Collaborate

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design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Teid võib huvitada

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

P

Maximum Continuous Drain Current

3 A

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

140 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Maximum Power Dissipation

1.25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Length

3.1mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

10 nC @ 10 V

Width

1.7mm

Height

1.2mm

Minimum Operating Temperature

-55 °C

Toote üksikasjad

P-Channel Power MOSFET, Taiwan Semiconductor

MOSFET Transistors, Taiwan Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Teid võib huvitada