Tehnilised dokumendid
Spetsifikatsioonid:
Brand
Taiwan SemiconductorChannel Type
N
Maximum Continuous Drain Current
28 A
Maximum Drain Source Voltage
20 V
Package Type
SOP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
31 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.3V
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±8 V
Length
4.85mm
Typical Gate Charge @ Vgs
12.3 nC @ 4.5 V
Width
3.9mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Height
0.8mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 0,035
tk (rullis 2500) (ilma käibemaksuta)
€ 0,043
tk (rullis 2500) (koos käibemaksuga)
2500
€ 0,035
tk (rullis 2500) (ilma käibemaksuta)
€ 0,043
tk (rullis 2500) (koos käibemaksuga)
2500
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
Taiwan SemiconductorChannel Type
N
Maximum Continuous Drain Current
28 A
Maximum Drain Source Voltage
20 V
Package Type
SOP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
31 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.3V
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±8 V
Length
4.85mm
Typical Gate Charge @ Vgs
12.3 nC @ 4.5 V
Width
3.9mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Height
0.8mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V