N-Channel MOSFET, 3.5 A, 12 V, 6-Pin DSBGA Texas Instruments CSD13306WT

RS tootekood: 900-9927Bränd: Texas InstrumentsTootja Part nr.: CSD13306WT
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Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

3.5 A

Maximum Drain Source Voltage

12 V

Package Type

DSBGA

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

15.5 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

1.9 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-10 V, +10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

1mm

Typical Gate Charge @ Vgs

8.6 nC @ 0 V

Width

1.49mm

Transistor Material

Si

Series

NexFET

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1V

Height

0.28mm

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Palun kontrollige hiljem uuesti.

Lao andmed ajutiselt ei ole saadaval.

€ 0,762

tk (pakis 10) (ilma käibemaksuta)

€ 0,93

tk (pakis 10) (koos käibemaksuga)

N-Channel MOSFET, 3.5 A, 12 V, 6-Pin DSBGA Texas Instruments CSD13306WT

€ 0,762

tk (pakis 10) (ilma käibemaksuta)

€ 0,93

tk (pakis 10) (koos käibemaksuga)

N-Channel MOSFET, 3.5 A, 12 V, 6-Pin DSBGA Texas Instruments CSD13306WT
Lao andmed ajutiselt ei ole saadaval.

Osta lahtiselt

kogusÜhikuhindPer Pakend
10 - 10€ 0,762€ 7,62
20 - 40€ 0,491€ 4,91
50 - 90€ 0,475€ 4,75
100 - 240€ 0,381€ 3,81
250+€ 0,341€ 3,41

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

3.5 A

Maximum Drain Source Voltage

12 V

Package Type

DSBGA

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

15.5 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

1.9 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-10 V, +10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

1mm

Typical Gate Charge @ Vgs

8.6 nC @ 0 V

Width

1.49mm

Transistor Material

Si

Series

NexFET

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1V

Height

0.28mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more