N-Channel MOSFET, 2.9 A, 12 V, 3-Pin PICOSTAR Texas Instruments CSD13383F4T
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
2.9 A
Maximum Drain Source Voltage
12 V
Package Type
PICOSTAR
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
65 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Number of Elements per Chip
1
Length
0.64mm
Typical Gate Charge @ Vgs
2 nC @ 0 V
Maximum Operating Temperature
+150 °C
Width
1.04mm
Transistor Material
Si
Series
FemtoFET
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Height
0.35mm
Toote üksikasjad
N-Channel FemtoFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
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Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 0,306
tk (rullis) (ilma käibemaksuta)
€ 0,373
tk (rullis) (koos käibemaksuga)
10
€ 0,306
tk (rullis) (ilma käibemaksuta)
€ 0,373
tk (rullis) (koos käibemaksuga)
10
Osta lahtiselt
| kogus | Ühikuhind | Per Rull |
|---|---|---|
| 10 - 10 | € 0,306 | € 3,06 |
| 20 - 40 | € 0,242 | € 2,42 |
| 50 - 90 | € 0,199 | € 1,99 |
| 100 - 240 | € 0,156 | € 1,56 |
| 250+ | € 0,154 | € 1,54 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
2.9 A
Maximum Drain Source Voltage
12 V
Package Type
PICOSTAR
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
65 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Number of Elements per Chip
1
Length
0.64mm
Typical Gate Charge @ Vgs
2 nC @ 0 V
Maximum Operating Temperature
+150 °C
Width
1.04mm
Transistor Material
Si
Series
FemtoFET
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Height
0.35mm
Toote üksikasjad
N-Channel FemtoFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products