N-Channel MOSFET, 100 A, 25 V, 8-Pin VSON-CLIP Texas Instruments CSD16321Q5

RS tootekood: 162-8526Bränd: Texas InstrumentsTootja Part nr.: CSD16321Q5
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Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

25 V

Series

NexFET

Package Type

VSON-CLIP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

3.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.4V

Minimum Gate Threshold Voltage

0.9V

Maximum Power Dissipation

3.1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +10 V

Transistor Material

Si

Length

6.1mm

Typical Gate Charge @ Vgs

14 nC @ 4.5 V

Width

5.1mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Height

1.05mm

Minimum Operating Temperature

-55 °C

Päritoluriik

Malaysia

Toote üksikasjad

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

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Palun kontrollige hiljem uuesti.

Lao andmed ajutiselt ei ole saadaval.

€ 0,881

tk (rullis 2500) (ilma käibemaksuta)

€ 1,075

tk (rullis 2500) (koos käibemaksuga)

N-Channel MOSFET, 100 A, 25 V, 8-Pin VSON-CLIP Texas Instruments CSD16321Q5

€ 0,881

tk (rullis 2500) (ilma käibemaksuta)

€ 1,075

tk (rullis 2500) (koos käibemaksuga)

N-Channel MOSFET, 100 A, 25 V, 8-Pin VSON-CLIP Texas Instruments CSD16321Q5
Lao andmed ajutiselt ei ole saadaval.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

25 V

Series

NexFET

Package Type

VSON-CLIP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

3.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.4V

Minimum Gate Threshold Voltage

0.9V

Maximum Power Dissipation

3.1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +10 V

Transistor Material

Si

Length

6.1mm

Typical Gate Charge @ Vgs

14 nC @ 4.5 V

Width

5.1mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Height

1.05mm

Minimum Operating Temperature

-55 °C

Päritoluriik

Malaysia

Toote üksikasjad

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more