Tehnilised dokumendid
Spetsifikatsioonid:
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
25 V
Package Type
SON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
6.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.4V
Minimum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.4mm
Typical Gate Charge @ Vgs
6.2 nC @ 4.5 V
Width
3.4mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.1mm
Series
NexFET
Toote üksikasjad
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 1,00
tk (pakis 5) (ilma käibemaksuta)
€ 1,22
tk (pakis 5) (koos käibemaksuga)
5
€ 1,00
tk (pakis 5) (ilma käibemaksuta)
€ 1,22
tk (pakis 5) (koos käibemaksuga)
5
Osta lahtiselt
kogus | Ühikuhind | Per Pakend |
---|---|---|
5 - 20 | € 1,00 | € 5,00 |
25+ | € 0,809 | € 4,04 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
25 V
Package Type
SON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
6.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.4V
Minimum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.4mm
Typical Gate Charge @ Vgs
6.2 nC @ 4.5 V
Width
3.4mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.1mm
Series
NexFET
Toote üksikasjad