N-Channel MOSFET, 100 A, 25 V, 8-Pin SON Texas Instruments CSD16413Q5A
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
25 V
Package Type
SON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
5.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.9V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +16 V
Width
5mm
Number of Elements per Chip
1
Length
5.8mm
Typical Gate Charge @ Vgs
9 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Series
NexFET
Minimum Operating Temperature
-55 °C
Height
1.1mm
Päritoluriik
Malaysia
Toote üksikasjad
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 0,546
tk (rullis 2500) (ilma käibemaksuta)
€ 0,666
tk (rullis 2500) (koos käibemaksuga)
2500
€ 0,546
tk (rullis 2500) (ilma käibemaksuta)
€ 0,666
tk (rullis 2500) (koos käibemaksuga)
2500
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
25 V
Package Type
SON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
5.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.9V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +16 V
Width
5mm
Number of Elements per Chip
1
Length
5.8mm
Typical Gate Charge @ Vgs
9 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Series
NexFET
Minimum Operating Temperature
-55 °C
Height
1.1mm
Päritoluriik
Malaysia
Toote üksikasjad
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products