N-Channel MOSFET, 47 A, 30 V, 8-Pin SON Texas Instruments CSD17308Q3

RS tootekood: 162-8541Bränd: Texas InstrumentsTootja Part nr.: CSD17308Q3
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Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

47 A

Maximum Drain Source Voltage

30 V

Series

NexFET

Package Type

SON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

16.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.8V

Minimum Gate Threshold Voltage

0.9V

Maximum Power Dissipation

2.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +10 V

Transistor Material

Si

Length

3.4mm

Typical Gate Charge @ Vgs

3.9 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Width

3.4mm

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Height

1.1mm

Toote üksikasjad

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

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Palun kontrollige hiljem uuesti.

Lao andmed ajutiselt ei ole saadaval.

€ 0,35

tk (rullis 2500) (ilma käibemaksuta)

€ 0,427

tk (rullis 2500) (koos käibemaksuga)

N-Channel MOSFET, 47 A, 30 V, 8-Pin SON Texas Instruments CSD17308Q3

€ 0,35

tk (rullis 2500) (ilma käibemaksuta)

€ 0,427

tk (rullis 2500) (koos käibemaksuga)

N-Channel MOSFET, 47 A, 30 V, 8-Pin SON Texas Instruments CSD17308Q3
Lao andmed ajutiselt ei ole saadaval.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

47 A

Maximum Drain Source Voltage

30 V

Series

NexFET

Package Type

SON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

16.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.8V

Minimum Gate Threshold Voltage

0.9V

Maximum Power Dissipation

2.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +10 V

Transistor Material

Si

Length

3.4mm

Typical Gate Charge @ Vgs

3.9 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Width

3.4mm

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Height

1.1mm

Toote üksikasjad

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more