N-Channel MOSFET, 3.1 A, 30 V, 3-Pin PICOSTAR Texas Instruments CSD17381F4T
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
3.1 A
Maximum Drain Source Voltage
30 V
Package Type
PICOSTAR
Series
FemtoFET
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
250 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.1V
Minimum Gate Threshold Voltage
0.65V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Maximum Operating Temperature
+150 °C
Length
1.04mm
Typical Gate Charge @ Vgs
1.04 nC @ 4.5 V
Number of Elements per Chip
1
Width
0.64mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
0.35mm
Toote üksikasjad
N-Channel FemtoFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
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Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 0,772
tk (pakis 20) (ilma käibemaksuta)
€ 0,942
tk (pakis 20) (koos käibemaksuga)
20
€ 0,772
tk (pakis 20) (ilma käibemaksuta)
€ 0,942
tk (pakis 20) (koos käibemaksuga)
20
Osta lahtiselt
| kogus | Ühikuhind | Per Pakend |
|---|---|---|
| 20 - 20 | € 0,772 | € 15,44 |
| 40 - 80 | € 0,751 | € 15,02 |
| 100 - 480 | € 0,732 | € 14,64 |
| 500 - 980 | € 0,713 | € 14,26 |
| 1000+ | € 0,695 | € 13,90 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
3.1 A
Maximum Drain Source Voltage
30 V
Package Type
PICOSTAR
Series
FemtoFET
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
250 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.1V
Minimum Gate Threshold Voltage
0.65V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Maximum Operating Temperature
+150 °C
Length
1.04mm
Typical Gate Charge @ Vgs
1.04 nC @ 4.5 V
Number of Elements per Chip
1
Width
0.64mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
0.35mm
Toote üksikasjad
N-Channel FemtoFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products