N-Channel MOSFET, 1.5 A, 30 V, 3-Pin PICOSTAR Texas Instruments CSD17483F4T

RS tootekood: 145-0959Bränd: Texas InstrumentsTootja Part nr.: CSD17483F4T
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Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

1.5 A

Maximum Drain Source Voltage

30 V

Package Type

PICOSTAR

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

550 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.1V

Minimum Gate Threshold Voltage

0.65V

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Width

0.64mm

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

1.04mm

Typical Gate Charge @ Vgs

1.01 nC @ 4.5 V

Number of Elements per Chip

1

Height

0.35mm

Series

FemtoFET

Minimum Operating Temperature

-55 °C

Päritoluriik

Malaysia

Toote üksikasjad

N-Channel FemtoFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

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€ 0,053

tk (rullis 250) (ilma käibemaksuta)

€ 0,065

tk (rullis 250) (koos käibemaksuga)

N-Channel MOSFET, 1.5 A, 30 V, 3-Pin PICOSTAR Texas Instruments CSD17483F4T

€ 0,053

tk (rullis 250) (ilma käibemaksuta)

€ 0,065

tk (rullis 250) (koos käibemaksuga)

N-Channel MOSFET, 1.5 A, 30 V, 3-Pin PICOSTAR Texas Instruments CSD17483F4T
Lao andmed ajutiselt ei ole saadaval.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

1.5 A

Maximum Drain Source Voltage

30 V

Package Type

PICOSTAR

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

550 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.1V

Minimum Gate Threshold Voltage

0.65V

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Width

0.64mm

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

1.04mm

Typical Gate Charge @ Vgs

1.01 nC @ 4.5 V

Number of Elements per Chip

1

Height

0.35mm

Series

FemtoFET

Minimum Operating Temperature

-55 °C

Päritoluriik

Malaysia

Toote üksikasjad

N-Channel FemtoFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more