Tehnilised dokumendid
Spetsifikatsioonid:
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
1.5 A
Maximum Drain Source Voltage
30 V
Package Type
PICOSTAR
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
550 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.1V
Minimum Gate Threshold Voltage
0.65V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
1.04mm
Width
0.64mm
Typical Gate Charge @ Vgs
1.01 nC @ 4.5 V
Transistor Material
Si
Series
FemtoFET
Minimum Operating Temperature
-55 °C
Height
0.35mm
Toote üksikasjad
N-Channel FemtoFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 0,054
tk (pakis 20) (ilma käibemaksuta)
€ 0,066
tk (pakis 20) (koos käibemaksuga)
20
€ 0,054
tk (pakis 20) (ilma käibemaksuta)
€ 0,066
tk (pakis 20) (koos käibemaksuga)
20
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
1.5 A
Maximum Drain Source Voltage
30 V
Package Type
PICOSTAR
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
550 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.1V
Minimum Gate Threshold Voltage
0.65V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
1.04mm
Width
0.64mm
Typical Gate Charge @ Vgs
1.01 nC @ 4.5 V
Transistor Material
Si
Series
FemtoFET
Minimum Operating Temperature
-55 °C
Height
0.35mm
Toote üksikasjad