N-Channel MOSFET, 11 A, 30 V, 8-Pin VSCONP Texas Instruments CSD17579Q3AT

RS tootekood: 145-7677Bränd: Texas InstrumentsTootja Part nr.: CSD17579Q3AT
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Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

30 V

Package Type

VSCONP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

14.2 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

3.2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

3.5mm

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Number of Elements per Chip

1

Length

3.5mm

Typical Gate Charge @ Vgs

5.3 nC @ 4.5 V

Height

0.9mm

Series

NexFET

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1V

Päritoluriik

Philippines

Toote üksikasjad

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

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Palun kontrollige hiljem uuesti.

Lao andmed ajutiselt ei ole saadaval.

€ 0,333

tk (rullis 250) (ilma käibemaksuta)

€ 0,406

tk (rullis 250) (koos käibemaksuga)

N-Channel MOSFET, 11 A, 30 V, 8-Pin VSCONP Texas Instruments CSD17579Q3AT

€ 0,333

tk (rullis 250) (ilma käibemaksuta)

€ 0,406

tk (rullis 250) (koos käibemaksuga)

N-Channel MOSFET, 11 A, 30 V, 8-Pin VSCONP Texas Instruments CSD17579Q3AT
Lao andmed ajutiselt ei ole saadaval.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

30 V

Package Type

VSCONP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

14.2 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

3.2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

3.5mm

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Number of Elements per Chip

1

Length

3.5mm

Typical Gate Charge @ Vgs

5.3 nC @ 4.5 V

Height

0.9mm

Series

NexFET

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1V

Päritoluriik

Philippines

Toote üksikasjad

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more