Tehnilised dokumendid
Spetsifikatsioonid:
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
204 A
Maximum Drain Source Voltage
40 V
Package Type
VSON-CLIP
Series
NexFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
3.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
3.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.1mm
Maximum Operating Temperature
+150 °C
Length
6.1mm
Typical Gate Charge @ Vgs
25 nC @ 4.5 V
Number of Elements per Chip
1
Transistor Material
Si
Height
1.05mm
Minimum Operating Temperature
-55 °C
Toote üksikasjad
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 2,55
tk (rullis) (ilma käibemaksuta)
€ 3,111
tk (rullis) (koos käibemaksuga)
5
€ 2,55
tk (rullis) (ilma käibemaksuta)
€ 3,111
tk (rullis) (koos käibemaksuga)
5
Osta lahtiselt
kogus | Ühikuhind | Per Rull |
---|---|---|
5 - 20 | € 2,55 | € 12,75 |
25 - 45 | € 2,40 | € 12,00 |
50 - 120 | € 2,20 | € 11,00 |
125 - 245 | € 1,95 | € 9,75 |
250+ | € 1,85 | € 9,25 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
204 A
Maximum Drain Source Voltage
40 V
Package Type
VSON-CLIP
Series
NexFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
3.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
3.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.1mm
Maximum Operating Temperature
+150 °C
Length
6.1mm
Typical Gate Charge @ Vgs
25 nC @ 4.5 V
Number of Elements per Chip
1
Transistor Material
Si
Height
1.05mm
Minimum Operating Temperature
-55 °C
Toote üksikasjad