Tehnilised dokumendid
Spetsifikatsioonid:
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
75 A
Maximum Drain Source Voltage
40 V
Package Type
VSONP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
9.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5.8mm
Typical Gate Charge @ Vgs
7.7 nC @ 4.5 V
Width
5mm
Transistor Material
Si
Series
NexFET
Minimum Operating Temperature
-55 °C
Height
1.1mm
Toote üksikasjad
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 0,967
tk (pakis 5) (ilma käibemaksuta)
€ 1,18
tk (pakis 5) (koos käibemaksuga)
5
€ 0,967
tk (pakis 5) (ilma käibemaksuta)
€ 1,18
tk (pakis 5) (koos käibemaksuga)
5
Osta lahtiselt
kogus | Ühikuhind | Per Pakend |
---|---|---|
5 - 20 | € 0,967 | € 4,84 |
25 - 45 | € 0,919 | € 4,60 |
50 - 120 | € 0,829 | € 4,14 |
125 - 245 | € 0,743 | € 3,72 |
250+ | € 0,71 | € 3,55 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
75 A
Maximum Drain Source Voltage
40 V
Package Type
VSONP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
9.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5.8mm
Typical Gate Charge @ Vgs
7.7 nC @ 4.5 V
Width
5mm
Transistor Material
Si
Series
NexFET
Minimum Operating Temperature
-55 °C
Height
1.1mm
Toote üksikasjad