N-Channel MOSFET, 169 A, 60 V, 3-Pin TO-220 Texas Instruments CSD18532KCS

RS tootekood: 827-4880PBränd: Texas InstrumentsTootja Part nr.: CSD18532KCS
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Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

169 A

Maximum Drain Source Voltage

60 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

5.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

250 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Length

10.67mm

Typical Gate Charge @ Vgs

21 nC @ 4.5 V

Width

4.7mm

Transistor Material

Si

Number of Elements per Chip

1

Series

NexFET

Minimum Operating Temperature

-55 °C

Height

16.51mm

Toote üksikasjad

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

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€ 2,10

tk (torus) (ilma käibemaksuta)

€ 2,562

tk (torus) (koos käibemaksuga)

N-Channel MOSFET, 169 A, 60 V, 3-Pin TO-220 Texas Instruments CSD18532KCS
Valige pakendi tüüp

€ 2,10

tk (torus) (ilma käibemaksuta)

€ 2,562

tk (torus) (koos käibemaksuga)

N-Channel MOSFET, 169 A, 60 V, 3-Pin TO-220 Texas Instruments CSD18532KCS
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

Osta lahtiselt

kogusÜhikuhindPer Tuub
5 - 45€ 2,10€ 10,50
50 - 95€ 1,70€ 8,50
100 - 245€ 1,35€ 6,75
250 - 495€ 1,25€ 6,25
500+€ 1,20€ 6,00

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Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

169 A

Maximum Drain Source Voltage

60 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

5.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

250 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Length

10.67mm

Typical Gate Charge @ Vgs

21 nC @ 4.5 V

Width

4.7mm

Transistor Material

Si

Number of Elements per Chip

1

Series

NexFET

Minimum Operating Temperature

-55 °C

Height

16.51mm

Toote üksikasjad

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more