Tehnilised dokumendid
Spetsifikatsioonid:
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
169 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
5.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
250 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Length
10.67mm
Typical Gate Charge @ Vgs
21 nC @ 4.5 V
Width
4.7mm
Transistor Material
Si
Number of Elements per Chip
1
Series
NexFET
Minimum Operating Temperature
-55 °C
Height
16.51mm
Toote üksikasjad
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 2,10
tk (torus) (ilma käibemaksuta)
€ 2,562
tk (torus) (koos käibemaksuga)
5
€ 2,10
tk (torus) (ilma käibemaksuta)
€ 2,562
tk (torus) (koos käibemaksuga)
5
Osta lahtiselt
kogus | Ühikuhind | Per Tuub |
---|---|---|
5 - 45 | € 2,10 | € 10,50 |
50 - 95 | € 1,70 | € 8,50 |
100 - 245 | € 1,35 | € 6,75 |
250 - 495 | € 1,25 | € 6,25 |
500+ | € 1,20 | € 6,00 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
169 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
5.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
250 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Length
10.67mm
Typical Gate Charge @ Vgs
21 nC @ 4.5 V
Width
4.7mm
Transistor Material
Si
Number of Elements per Chip
1
Series
NexFET
Minimum Operating Temperature
-55 °C
Height
16.51mm
Toote üksikasjad