Technical Document
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
54 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
18 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.6V
Maximum Power Dissipation
79 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
10.67mm
Typical Gate Charge @ Vgs
14 nC @ 10 V
Width
4.7mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Height
16.51mm
Series
NexFET
Minimum Operating Temperature
-55 °C
Product details
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
€ 23.72
€ 0.949 Each (Supplied in a Tube) (Exc. Vat)
€ 29.41
€ 1.177 Each (Supplied in a Tube) (inc. VAT)
Production pack (Tube)
25
€ 23.72
€ 0.949 Each (Supplied in a Tube) (Exc. Vat)
€ 29.41
€ 1.177 Each (Supplied in a Tube) (inc. VAT)
Production pack (Tube)
25
Stock information temporarily unavailable.
Please check again later.
Quantity | Unit price | Per Tube |
---|---|---|
25 - 45 | € 0.949 | € 4.74 |
50 - 245 | € 0.84 | € 4.20 |
250 - 495 | € 0.726 | € 3.63 |
500+ | € 0.643 | € 3.22 |
Technical Document
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
54 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
18 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.6V
Maximum Power Dissipation
79 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
10.67mm
Typical Gate Charge @ Vgs
14 nC @ 10 V
Width
4.7mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Height
16.51mm
Series
NexFET
Minimum Operating Temperature
-55 °C
Product details