N-Channel MOSFET, 157 A, 80 V, 8-Pin VSON-CLIP Texas Instruments CSD19502Q5BT

RS tootekood: 133-0154Bränd: Texas InstrumentsTootja Part nr.: CSD19502Q5BT
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Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

157 A

Maximum Drain Source Voltage

80 V

Package Type

VSON-CLIP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

4.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.3V

Minimum Gate Threshold Voltage

2.2V

Maximum Power Dissipation

195 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.1mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.1mm

Typical Gate Charge @ Vgs

130 nC @ 10 V

Height

1.05mm

Series

NexFET

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1V

Toote üksikasjad

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

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Lao andmed ajutiselt ei ole saadaval.

Palun kontrollige hiljem uuesti.

Lao andmed ajutiselt ei ole saadaval.

€ 2,95

tk (pakis 2) (ilma käibemaksuta)

€ 3,599

tk (pakis 2) (koos käibemaksuga)

N-Channel MOSFET, 157 A, 80 V, 8-Pin VSON-CLIP Texas Instruments CSD19502Q5BT
Valige pakendi tüüp

€ 2,95

tk (pakis 2) (ilma käibemaksuta)

€ 3,599

tk (pakis 2) (koos käibemaksuga)

N-Channel MOSFET, 157 A, 80 V, 8-Pin VSON-CLIP Texas Instruments CSD19502Q5BT
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

Osta lahtiselt

kogusÜhikuhindPer Pakend
2 - 8€ 2,95€ 5,90
10 - 18€ 2,80€ 5,60
20 - 48€ 2,55€ 5,10
50 - 98€ 2,30€ 4,60
100+€ 2,20€ 4,40

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
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Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

157 A

Maximum Drain Source Voltage

80 V

Package Type

VSON-CLIP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

4.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.3V

Minimum Gate Threshold Voltage

2.2V

Maximum Power Dissipation

195 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.1mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.1mm

Typical Gate Charge @ Vgs

130 nC @ 10 V

Height

1.05mm

Series

NexFET

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1V

Toote üksikasjad

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more