Tehnilised dokumendid
Spetsifikatsioonid:
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
259 A
Maximum Drain Source Voltage
100 V
Series
NexFET
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.2V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.67mm
Width
4.7mm
Transistor Material
Si
Typical Gate Charge @ Vgs
118 nC @ 10 V
Minimum Operating Temperature
-55 °C
Height
16.51mm
Toote üksikasjad
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 5,30
tk (pakis 2) (ilma käibemaksuta)
€ 6,466
tk (pakis 2) (koos käibemaksuga)
2
€ 5,30
tk (pakis 2) (ilma käibemaksuta)
€ 6,466
tk (pakis 2) (koos käibemaksuga)
2
Osta lahtiselt
kogus | Ühikuhind | Per Pakend |
---|---|---|
2 - 24 | € 5,30 | € 10,60 |
26+ | € 4,25 | € 8,50 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
259 A
Maximum Drain Source Voltage
100 V
Series
NexFET
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.2V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.67mm
Width
4.7mm
Transistor Material
Si
Typical Gate Charge @ Vgs
118 nC @ 10 V
Minimum Operating Temperature
-55 °C
Height
16.51mm
Toote üksikasjad