N-Channel MOSFET, 53 A, 100 V, 8-Pin VSON-CLIP Texas Instruments CSD19537Q3T

RS tootekood: 133-0155Bränd: Texas InstrumentsTootja Part nr.: CSD19537Q3T
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Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

53 A

Maximum Drain Source Voltage

100 V

Package Type

VSON-CLIP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

16.6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.6V

Minimum Gate Threshold Voltage

2.6V

Maximum Power Dissipation

83 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

3.4mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3.4mm

Typical Gate Charge @ Vgs

44 nC @ 10 V

Height

1.1mm

Series

NexFET

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1V

Toote üksikasjad

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

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Palun kontrollige hiljem uuesti.

Lao andmed ajutiselt ei ole saadaval.

€ 1,50

tk (pakis 5) (ilma käibemaksuta)

€ 1,83

tk (pakis 5) (koos käibemaksuga)

N-Channel MOSFET, 53 A, 100 V, 8-Pin VSON-CLIP Texas Instruments CSD19537Q3T
Valige pakendi tüüp

€ 1,50

tk (pakis 5) (ilma käibemaksuta)

€ 1,83

tk (pakis 5) (koos käibemaksuga)

N-Channel MOSFET, 53 A, 100 V, 8-Pin VSON-CLIP Texas Instruments CSD19537Q3T
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

Osta lahtiselt

kogusÜhikuhindPer Pakend
5 - 10€ 1,50€ 7,50
15 - 45€ 1,30€ 6,50
50 - 245€ 1,10€ 5,50
250 - 495€ 0,888€ 4,44
500+€ 0,786€ 3,93

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
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Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

53 A

Maximum Drain Source Voltage

100 V

Package Type

VSON-CLIP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

16.6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.6V

Minimum Gate Threshold Voltage

2.6V

Maximum Power Dissipation

83 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

3.4mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3.4mm

Typical Gate Charge @ Vgs

44 nC @ 10 V

Height

1.1mm

Series

NexFET

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1V

Toote üksikasjad

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more