Tehnilised dokumendid
Spetsifikatsioonid:
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
12 V
Package Type
PICOSTAR
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
23 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
2.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Width
2.2mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
1.15mm
Typical Gate Charge @ Vgs
8.4 nC @ 4.5 V
Height
0.2mm
Series
NexFET
Minimum Operating Temperature
-55 °C
Päritoluriik
Philippines
Toote üksikasjad
N-Channel NexFET™ Dual MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 0,852
tk (rullis 250) (ilma käibemaksuta)
€ 1,039
tk (rullis 250) (koos käibemaksuga)
250
€ 0,852
tk (rullis 250) (ilma käibemaksuta)
€ 1,039
tk (rullis 250) (koos käibemaksuga)
250
Osta lahtiselt
kogus | Ühikuhind | Per Rull |
---|---|---|
250 - 250 | € 0,852 | € 213,00 |
500 - 1000 | € 0,81 | € 202,50 |
1250+ | € 0,728 | € 182,00 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
12 V
Package Type
PICOSTAR
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
23 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
2.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Width
2.2mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
1.15mm
Typical Gate Charge @ Vgs
8.4 nC @ 4.5 V
Height
0.2mm
Series
NexFET
Minimum Operating Temperature
-55 °C
Päritoluriik
Philippines
Toote üksikasjad