Dual P-Channel MOSFET, 60 A, 30 V, 8-Pin VSON Texas Instruments CSD87334Q3DT

RS tootekood: 133-0157Bränd: Texas InstrumentsTootja Part nr.: CSD87334Q3DT
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Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

P

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

30 V

Series

NexFET

Package Type

VSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

8.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.2V

Minimum Gate Threshold Voltage

0.75V

Maximum Power Dissipation

6 W

Transistor Configuration

Dual Base

Maximum Gate Source Voltage

-8 V, +10 V

Width

3.4mm

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Length

3.4mm

Typical Gate Charge @ Vgs

10.5 nC

Height

1.05mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1V

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MOSFET Transistors, Texas Instruments

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Palun kontrollige hiljem uuesti.

Lao andmed ajutiselt ei ole saadaval.

€ 0,712

tk (pakis 5) (ilma käibemaksuta)

€ 0,869

tk (pakis 5) (koos käibemaksuga)

Dual P-Channel MOSFET, 60 A, 30 V, 8-Pin VSON Texas Instruments CSD87334Q3DT
Valige pakendi tüüp

€ 0,712

tk (pakis 5) (ilma käibemaksuta)

€ 0,869

tk (pakis 5) (koos käibemaksuga)

Dual P-Channel MOSFET, 60 A, 30 V, 8-Pin VSON Texas Instruments CSD87334Q3DT
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

P

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

30 V

Series

NexFET

Package Type

VSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

8.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.2V

Minimum Gate Threshold Voltage

0.75V

Maximum Power Dissipation

6 W

Transistor Configuration

Dual Base

Maximum Gate Source Voltage

-8 V, +10 V

Width

3.4mm

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Length

3.4mm

Typical Gate Charge @ Vgs

10.5 nC

Height

1.05mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1V

Toote üksikasjad

Power MOSFET Modules, Texas Instruments

MOSFET Transistors, Texas Instruments

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more