Dual P-Channel MOSFET, 70 A, 30 V, 8-Pin LSON-CLIP Texas Instruments CSD87335Q3DT
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
Texas InstrumentsChannel Type
P
Maximum Continuous Drain Current
70 A
Maximum Drain Source Voltage
30 V
Package Type
LSON-CLIP
Series
NexFET
Mounting Type
Surface Mount
Pin Count
8
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Minimum Gate Threshold Voltage
0.75V
Maximum Power Dissipation
6 W
Transistor Configuration
Dual Base
Maximum Gate Source Voltage
-8 V, +10 V
Maximum Operating Temperature
+150 °C
Length
3.4mm
Typical Gate Charge @ Vgs
11 nC, 19 nC
Width
3.4mm
Number of Elements per Chip
2
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Height
1.5mm
Toote üksikasjad
Power MOSFET Modules, Texas Instruments
MOSFET Transistors, Texas Instruments
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€ 0,826
tk (pakis 5) (ilma käibemaksuta)
€ 1,008
tk (pakis 5) (koos käibemaksuga)
5
€ 0,826
tk (pakis 5) (ilma käibemaksuta)
€ 1,008
tk (pakis 5) (koos käibemaksuga)
5
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
Texas InstrumentsChannel Type
P
Maximum Continuous Drain Current
70 A
Maximum Drain Source Voltage
30 V
Package Type
LSON-CLIP
Series
NexFET
Mounting Type
Surface Mount
Pin Count
8
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Minimum Gate Threshold Voltage
0.75V
Maximum Power Dissipation
6 W
Transistor Configuration
Dual Base
Maximum Gate Source Voltage
-8 V, +10 V
Maximum Operating Temperature
+150 °C
Length
3.4mm
Typical Gate Charge @ Vgs
11 nC, 19 nC
Width
3.4mm
Number of Elements per Chip
2
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Height
1.5mm
Toote üksikasjad