P-Channel MOSFET, 2.3 A, 15 V, 8-Pin SOIC Texas Instruments TPS1101D
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
Texas InstrumentsChannel Type
P
Maximum Continuous Drain Current
2.3 A
Maximum Drain Source Voltage
15 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
90 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
791 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-15 V, +2 V
Typical Gate Charge @ Vgs
11.25 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+125 °C
Length
4.9mm
Width
3.91mm
Transistor Material
Si
Minimum Operating Temperature
-40 °C
Height
1.58mm
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 2,85
tk (pakis 5) (ilma käibemaksuta)
€ 3,477
tk (pakis 5) (koos käibemaksuga)
5
€ 2,85
tk (pakis 5) (ilma käibemaksuta)
€ 3,477
tk (pakis 5) (koos käibemaksuga)
5
Osta lahtiselt
| kogus | Ühikuhind | Per Pakend |
|---|---|---|
| 5 - 120 | € 2,85 | € 14,25 |
| 125 - 495 | € 2,30 | € 11,50 |
| 500 - 1245 | € 2,05 | € 10,25 |
| 1250 - 2495 | € 1,60 | € 8,00 |
| 2500+ | € 1,45 | € 7,25 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
Texas InstrumentsChannel Type
P
Maximum Continuous Drain Current
2.3 A
Maximum Drain Source Voltage
15 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
90 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
791 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-15 V, +2 V
Typical Gate Charge @ Vgs
11.25 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+125 °C
Length
4.9mm
Width
3.91mm
Transistor Material
Si
Minimum Operating Temperature
-40 °C
Height
1.58mm
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products