Tehnilised dokumendid
Spetsifikatsioonid:
Brand
ToshibaChannel Type
N
Idss Drain-Source Cut-off Current
0.3 to 0.75mA
Maximum Drain Source Voltage
10 V
Maximum Gate Source Voltage
-30 V
Maximum Drain Gate Voltage
-50V
Configuration
Single
Transistor Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-346 (SC-59)
Pin Count
3
Dimensions
2.9 x 1.5 x 1.1mm
Height
1.1mm
Width
1.5mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+125 °C
Length
2.9mm
Toote üksikasjad
N-channel JFET, Toshiba
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
€ 21,40
€ 0,214 tk (rullis) (ilma käibemaksuta)
€ 26,54
€ 0,265 tk (rullis) (koos käibemaksuga)
Tootmispakett (Rull)
100
€ 21,40
€ 0,214 tk (rullis) (ilma käibemaksuta)
€ 26,54
€ 0,265 tk (rullis) (koos käibemaksuga)
Lao andmed ajutiselt ei ole saadaval.
Tootmispakett (Rull)
100
Lao andmed ajutiselt ei ole saadaval.
| kogus | Ühikuhind | Per Rull |
|---|---|---|
| 100 - 190 | € 0,214 | € 2,14 |
| 200 - 390 | € 0,194 | € 1,94 |
| 400+ | € 0,19 | € 1,90 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
ToshibaChannel Type
N
Idss Drain-Source Cut-off Current
0.3 to 0.75mA
Maximum Drain Source Voltage
10 V
Maximum Gate Source Voltage
-30 V
Maximum Drain Gate Voltage
-50V
Configuration
Single
Transistor Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-346 (SC-59)
Pin Count
3
Dimensions
2.9 x 1.5 x 1.1mm
Height
1.1mm
Width
1.5mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+125 °C
Length
2.9mm
Toote üksikasjad
N-channel JFET, Toshiba
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.


