Toshiba GT60J323(Q) IGBT, 60 A 600 V, 3-Pin TO-3PLH, Through Hole
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
ToshibaMaximum Continuous Collector Current
60 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±25V
Package Type
TO-3PLH
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
20.5 x 5.2 x 26mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Päritoluriik
Japan
Toote üksikasjad
IGBT Discretes, Toshiba
IGBT Discretes & Modules, Toshiba
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 6,50
€ 6,50 tk (ilma käibemaksuta)
€ 7,93
€ 7,93 tk (koos käibemaksuga)
1
€ 6,50
€ 6,50 tk (ilma käibemaksuta)
€ 7,93
€ 7,93 tk (koos käibemaksuga)
1
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| kogus | Ühikuhind |
|---|---|
| 1 - 24 | € 6,50 |
| 25 - 99 | € 5,10 |
| 100 - 249 | € 4,45 |
| 250 - 499 | € 4,15 |
| 500+ | € 4,05 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
ToshibaMaximum Continuous Collector Current
60 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±25V
Package Type
TO-3PLH
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
20.5 x 5.2 x 26mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Päritoluriik
Japan
Toote üksikasjad
IGBT Discretes, Toshiba
IGBT Discretes & Modules, Toshiba
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products