Tehnilised dokumendid
Spetsifikatsioonid:
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
60 V
Series
TK
Package Type
TO-220SIS
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
2.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10mm
Typical Gate Charge @ Vgs
140 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
15mm
Päritoluriik
China
Toote üksikasjad
MOSFET Transistors, Toshiba
€ 13,00
€ 3,25 tk (pakis 4) (ilma käibemaksuta)
€ 15,86
€ 3,965 tk (pakis 4) (koos käibemaksuga)
Standard
4
€ 13,00
€ 3,25 tk (pakis 4) (ilma käibemaksuta)
€ 15,86
€ 3,965 tk (pakis 4) (koos käibemaksuga)
Standard
4
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
kogus | Ühikuhind | Per Pakend |
---|---|---|
4 - 16 | € 3,25 | € 13,00 |
20 - 76 | € 2,70 | € 10,80 |
80 - 196 | € 2,35 | € 9,40 |
200 - 396 | € 2,25 | € 9,00 |
400+ | € 2,20 | € 8,80 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
60 V
Series
TK
Package Type
TO-220SIS
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
2.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10mm
Typical Gate Charge @ Vgs
140 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
15mm
Päritoluriik
China
Toote üksikasjad