Toshiba TK N-Channel MOSFET, 100 A, 60 V, 3-Pin TO-220SIS TK100A06N1,S4X(S

RS tootekood: 827-6097Bränd: ToshibaTootja Part nr.: TK100A06N1,S4X(S
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Kuva kõik kategoorias MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

60 V

Series

TK

Package Type

TO-220SIS

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

2.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

45 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.5mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10mm

Typical Gate Charge @ Vgs

140 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

15mm

Päritoluriik

China

Toote üksikasjad

MOSFET Transistors, Toshiba

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Lao andmed ajutiselt ei ole saadaval.

€ 13,00

€ 3,25 tk (pakis 4) (ilma käibemaksuta)

€ 15,86

€ 3,965 tk (pakis 4) (koos käibemaksuga)

Toshiba TK N-Channel MOSFET, 100 A, 60 V, 3-Pin TO-220SIS TK100A06N1,S4X(S
Valige pakendi tüüp

€ 13,00

€ 3,25 tk (pakis 4) (ilma käibemaksuta)

€ 15,86

€ 3,965 tk (pakis 4) (koos käibemaksuga)

Toshiba TK N-Channel MOSFET, 100 A, 60 V, 3-Pin TO-220SIS TK100A06N1,S4X(S
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

Lao andmed ajutiselt ei ole saadaval.

Palun kontrollige hiljem uuesti.

kogusÜhikuhindPer Pakend
4 - 16€ 3,25€ 13,00
20 - 76€ 2,70€ 10,80
80 - 196€ 2,35€ 9,40
200 - 396€ 2,25€ 9,00
400+€ 2,20€ 8,80

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Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

60 V

Series

TK

Package Type

TO-220SIS

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

2.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

45 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.5mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10mm

Typical Gate Charge @ Vgs

140 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

15mm

Päritoluriik

China

Toote üksikasjad

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more