MOSFET Transistor Toshiba TK100A10N1,S4X(S
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
ToshibaMaximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220SIS
Maximum Drain Source Resistance
3,8 mΩ
Maximum Power Dissipation
45 W
Maximum Gate Source Voltage
±20 V
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
140 nC při 10 V
Päritoluriik
China
Toote üksikasjad
MOSFET Transistors, Toshiba
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Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 3,45
tk (pakis) (ilma käibemaksuta)
€ 4,209
tk (pakis) (koos käibemaksuga)
2
€ 3,45
tk (pakis) (ilma käibemaksuta)
€ 4,209
tk (pakis) (koos käibemaksuga)
2
Osta lahtiselt
| kogus | Ühikuhind | Per Kott |
|---|---|---|
| 2 - 18 | € 3,45 | € 6,90 |
| 20 - 38 | € 3,05 | € 6,10 |
| 40 - 98 | € 2,65 | € 5,30 |
| 100 - 498 | € 2,50 | € 5,00 |
| 500+ | € 2,35 | € 4,70 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
ToshibaMaximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220SIS
Maximum Drain Source Resistance
3,8 mΩ
Maximum Power Dissipation
45 W
Maximum Gate Source Voltage
±20 V
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
140 nC při 10 V
Päritoluriik
China
Toote üksikasjad
MOSFET Transistors, Toshiba
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products