Tehnilised dokumendid
Spetsifikatsioonid:
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
263 A
Maximum Drain Source Voltage
60 V
Series
U-MOSVIII-H
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
2.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
255 W
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.45mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
10.16mm
Typical Gate Charge @ Vgs
140 nC @ 10 V
Height
15.1mm
Forward Diode Voltage
1.2V
Päritoluriik
Japan
Toote üksikasjad
MOSFET Transistors, Toshiba
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 2,20
tk (pakis 5) (ilma käibemaksuta)
€ 2,684
tk (pakis 5) (koos käibemaksuga)
5
€ 2,20
tk (pakis 5) (ilma käibemaksuta)
€ 2,684
tk (pakis 5) (koos käibemaksuga)
5
Osta lahtiselt
kogus | Ühikuhind | Per Pakend |
---|---|---|
5 - 20 | € 2,20 | € 11,00 |
25 - 45 | € 2,00 | € 10,00 |
50 - 120 | € 1,80 | € 9,00 |
125+ | € 1,70 | € 8,50 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
263 A
Maximum Drain Source Voltage
60 V
Series
U-MOSVIII-H
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
2.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
255 W
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.45mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
10.16mm
Typical Gate Charge @ Vgs
140 nC @ 10 V
Height
15.1mm
Forward Diode Voltage
1.2V
Päritoluriik
Japan
Toote üksikasjad