Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
207 A
Maximum Drain Source Voltage
100 V
Series
TK
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
255 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.45mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.16mm
Typical Gate Charge @ Vgs
140 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
15.1mm
Product details
MOSFET Transistors, Toshiba
€ 3.35
€ 3.35 Each (Exc. Vat)
€ 4.15
€ 4.15 Each (inc. VAT)
Standard
1
€ 3.35
€ 3.35 Each (Exc. Vat)
€ 4.15
€ 4.15 Each (inc. VAT)
Stock information temporarily unavailable.
Standard
1
Stock information temporarily unavailable.
| Quantity | Unit price |
|---|---|
| 1 - 24 | € 3.35 |
| 25 - 99 | € 3.15 |
| 100 - 349 | € 3.00 |
| 350 - 499 | € 2.70 |
| 500+ | € 2.50 |
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
207 A
Maximum Drain Source Voltage
100 V
Series
TK
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
255 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.45mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.16mm
Typical Gate Charge @ Vgs
140 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
15.1mm
Product details


