Toshiba DTMOSIV N-Channel MOSFET, 15.8 A, 600 V, 3-Pin TO-220 TK16E60W5,S1VX(S

RS Stock No.: 125-0541Brand: ToshibaManufacturers Part No.: TK16E60W5,S1VX(S
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Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

15.8 A

Maximum Drain Source Voltage

600 V

Series

DTMOSIV

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

230 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

130 W

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Width

4.45mm

Length

10.16mm

Typical Gate Charge @ Vgs

43 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Forward Diode Voltage

1.7V

Height

15.1mm

Country of Origin

Japan

Product details

MOSFET Transistors, Toshiba

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€ 6.75

€ 1.35 Each (In a Pack of 5) (Exc. Vat)

€ 8.37

€ 1.674 Each (In a Pack of 5) (inc. VAT)

Toshiba DTMOSIV N-Channel MOSFET, 15.8 A, 600 V, 3-Pin TO-220 TK16E60W5,S1VX(S

5

Available in multiples of 5
5€ 6.75
10€ 13.50
15€ 20.25
20€ 27.00
25€ 20.02
30€ 24.03
35€ 28.04
40€ 32.04
45€ 36.04
50€ 36.65
55€ 40.32
60€ 43.98
65€ 47.64
70€ 51.31
75€ 54.98

€ 6.75

€ 1.35 Each (In a Pack of 5) (Exc. Vat)

€ 8.37

€ 1.674 Each (In a Pack of 5) (inc. VAT)

Toshiba DTMOSIV N-Channel MOSFET, 15.8 A, 600 V, 3-Pin TO-220 TK16E60W5,S1VX(S

Stock information temporarily unavailable.

5

Available in multiples of 5
5€ 6.75
10€ 13.50
15€ 20.25
20€ 27.00
25€ 20.02
30€ 24.03
35€ 28.04
40€ 32.04
45€ 36.04
50€ 36.65
55€ 40.32
60€ 43.98
65€ 47.64
70€ 51.31
75€ 54.98

Stock information temporarily unavailable.

QuantityUnit pricePer Pack
5 - 20€ 1.35€ 6.75
25 - 45€ 0.801€ 4.00
50+€ 0.733€ 3.66

Ideate. Create. Collaborate

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

15.8 A

Maximum Drain Source Voltage

600 V

Series

DTMOSIV

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

230 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

130 W

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Width

4.45mm

Length

10.16mm

Typical Gate Charge @ Vgs

43 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Forward Diode Voltage

1.7V

Height

15.1mm

Country of Origin

Japan

Product details

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more