N-Channel MOSFET, 25 A, 600 V, 3-Pin TO-220SIS Toshiba TK25A60X,S5X(M

RS tootekood: 125-0553Bränd: ToshibaTootja Part nr.: TK25A60X,S5X(M
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Kuva kõik kategoorias MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

25 A

Maximum Drain Source Voltage

600 V

Series

DTMOSIV

Package Type

TO-220SIS

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

125 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

45 W

Maximum Gate Source Voltage

-30 V, +30 V

Width

4.5mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10mm

Typical Gate Charge @ Vgs

40 nC @ 10 V

Transistor Material

Si

Height

15mm

Forward Diode Voltage

1.7V

Päritoluriik

Japan

Toote üksikasjad

MOSFET N-Channel, TK2x Series, Toshiba

MOSFET Transistors, Toshiba

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Palun kontrollige hiljem uuesti.

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€ 12,75

€ 2,55 tk (pakis 5) (ilma käibemaksuta)

€ 15,55

€ 3,111 tk (pakis 5) (koos käibemaksuga)

N-Channel MOSFET, 25 A, 600 V, 3-Pin TO-220SIS Toshiba TK25A60X,S5X(M

€ 12,75

€ 2,55 tk (pakis 5) (ilma käibemaksuta)

€ 15,55

€ 3,111 tk (pakis 5) (koos käibemaksuga)

N-Channel MOSFET, 25 A, 600 V, 3-Pin TO-220SIS Toshiba TK25A60X,S5X(M
Lao andmed ajutiselt ei ole saadaval.

Osta lahtiselt

kogusÜhikuhindPer Pakend
5 - 20€ 2,55€ 12,75
25 - 45€ 2,20€ 11,00
50+€ 2,00€ 10,00

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
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Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

25 A

Maximum Drain Source Voltage

600 V

Series

DTMOSIV

Package Type

TO-220SIS

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

125 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

45 W

Maximum Gate Source Voltage

-30 V, +30 V

Width

4.5mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10mm

Typical Gate Charge @ Vgs

40 nC @ 10 V

Transistor Material

Si

Height

15mm

Forward Diode Voltage

1.7V

Päritoluriik

Japan

Toote üksikasjad

MOSFET N-Channel, TK2x Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more