N-Channel MOSFET, 30.8 A, 600 V, 3-Pin TO-220 Toshiba TK31E60X,S1X(S
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
30.8 A
Maximum Drain Source Voltage
600 V
Package Type
TO-220
Series
DTMOSIV
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
88 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
230 W
Maximum Gate Source Voltage
-30 V, +30 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
10.16mm
Typical Gate Charge @ Vgs
65 nC @ 10 V
Width
4.45mm
Number of Elements per Chip
1
Forward Diode Voltage
1.7V
Height
15.1mm
Päritoluriik
Japan
Toote üksikasjad
MOSFET N-Channel, TK3x Series, Toshiba
MOSFET Transistors, Toshiba
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 7,80
€ 3,90 tk (pakis 2) (ilma käibemaksuta)
€ 9,52
€ 4,758 tk (pakis 2) (koos käibemaksuga)
2
€ 7,80
€ 3,90 tk (pakis 2) (ilma käibemaksuta)
€ 9,52
€ 4,758 tk (pakis 2) (koos käibemaksuga)
2
Osta lahtiselt
| kogus | Ühikuhind | Per Pakend |
|---|---|---|
| 2 - 8 | € 3,90 | € 7,80 |
| 10 - 18 | € 2,85 | € 5,70 |
| 20 - 48 | € 2,80 | € 5,60 |
| 50 - 98 | € 2,70 | € 5,40 |
| 100+ | € 2,65 | € 5,30 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
30.8 A
Maximum Drain Source Voltage
600 V
Package Type
TO-220
Series
DTMOSIV
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
88 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
230 W
Maximum Gate Source Voltage
-30 V, +30 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
10.16mm
Typical Gate Charge @ Vgs
65 nC @ 10 V
Width
4.45mm
Number of Elements per Chip
1
Forward Diode Voltage
1.7V
Height
15.1mm
Päritoluriik
Japan
Toote üksikasjad
MOSFET N-Channel, TK3x Series, Toshiba
MOSFET Transistors, Toshiba
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products