Tehnilised dokumendid
Spetsifikatsioonid:
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
120 V
Series
TK
Package Type
TO-220SIS
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
13.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10mm
Typical Gate Charge @ Vgs
34 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
15mm
Päritoluriik
China
Toote üksikasjad
MOSFET N-Channel, TK3x Series, Toshiba
MOSFET Transistors, Toshiba
€ 3,87
€ 0,774 tk (pakis 5) (ilma käibemaksuta)
€ 4,80
€ 0,96 tk (pakis 5) (koos käibemaksuga)
5
€ 3,87
€ 0,774 tk (pakis 5) (ilma käibemaksuta)
€ 4,80
€ 0,96 tk (pakis 5) (koos käibemaksuga)
5
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
kogus | Ühikuhind | Per Pakend |
---|---|---|
5 - 45 | € 0,774 | € 3,87 |
50 - 95 | € 0,502 | € 2,51 |
100 - 195 | € 0,488 | € 2,44 |
200 - 395 | € 0,478 | € 2,39 |
400+ | € 0,462 | € 2,31 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
120 V
Series
TK
Package Type
TO-220SIS
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
13.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10mm
Typical Gate Charge @ Vgs
34 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
15mm
Päritoluriik
China
Toote üksikasjad