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Toshiba N-Channel MOSFET, 39 A, 600 V, 3-Pin TO-247 TK39N60W,S1VF(S

RS tootekood: 896-2372Bränd: ToshibaTootja Part nr.: TK39N60W,S1VF(S
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Kuva kõik kategoorias MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

39 A

Maximum Drain Source Voltage

600 V

Series

TK

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

65 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Maximum Power Dissipation

270 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

5.02mm

Transistor Material

Si

Number of Elements per Chip

1

Length

15.94mm

Typical Gate Charge @ Vgs

110 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

20.95mm

Päritoluriik

China

Toote üksikasjad

MOSFET N-Channel, TK3x Series, Toshiba

MOSFET Transistors, Toshiba

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Lao andmed ajutiselt ei ole saadaval.

€ 5,90

€ 5,90 tk (ilma käibemaksuta)

€ 7,20

€ 7,20 tk (koos käibemaksuga)

Toshiba N-Channel MOSFET, 39 A, 600 V, 3-Pin TO-247 TK39N60W,S1VF(S

€ 5,90

€ 5,90 tk (ilma käibemaksuta)

€ 7,20

€ 7,20 tk (koos käibemaksuga)

Toshiba N-Channel MOSFET, 39 A, 600 V, 3-Pin TO-247 TK39N60W,S1VF(S
Lao andmed ajutiselt ei ole saadaval.

Lao andmed ajutiselt ei ole saadaval.

Palun kontrollige hiljem uuesti.

kogusÜhikuhind
1 - 9€ 5,90
10 - 49€ 4,85
50 - 99€ 4,40
100 - 199€ 4,30
200+€ 4,20

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

39 A

Maximum Drain Source Voltage

600 V

Series

TK

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

65 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Maximum Power Dissipation

270 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

5.02mm

Transistor Material

Si

Number of Elements per Chip

1

Length

15.94mm

Typical Gate Charge @ Vgs

110 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

20.95mm

Päritoluriik

China

Toote üksikasjad

MOSFET N-Channel, TK3x Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more