Tehnilised dokumendid
Spetsifikatsioonid:
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
58 A
Maximum Drain Source Voltage
60 V
Series
TK
Package Type
TO-220SIS
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
5.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
35 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10mm
Typical Gate Charge @ Vgs
46 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
15mm
Päritoluriik
China
Toote üksikasjad
MOSFET Transistors, Toshiba
€ 4,10
€ 0,819 tk (pakis 5) (ilma käibemaksuta)
€ 5,00
€ 0,999 tk (pakis 5) (koos käibemaksuga)
5
€ 4,10
€ 0,819 tk (pakis 5) (ilma käibemaksuta)
€ 5,00
€ 0,999 tk (pakis 5) (koos käibemaksuga)
5
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
kogus | Ühikuhind | Per Pakend |
---|---|---|
5 - 45 | € 0,819 | € 4,10 |
50 - 95 | € 0,675 | € 3,38 |
100 - 245 | € 0,614 | € 3,07 |
250 - 495 | € 0,60 | € 3,00 |
500+ | € 0,59 | € 2,95 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
58 A
Maximum Drain Source Voltage
60 V
Series
TK
Package Type
TO-220SIS
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
5.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
35 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10mm
Typical Gate Charge @ Vgs
46 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
15mm
Päritoluriik
China
Toote üksikasjad