Tehnilised dokumendid
Spetsifikatsioonid:
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
105 A
Maximum Drain Source Voltage
60 V
Series
TK
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
5.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.45mm
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.16mm
Typical Gate Charge @ Vgs
46 nC @ 10 V
Height
15.1mm
Toote üksikasjad
MOSFET Transistors, Toshiba
€ 7,00
€ 1,40 tk (pakis 5) (ilma käibemaksuta)
€ 8,68
€ 1,736 tk (pakis 5) (koos käibemaksuga)
Standard
5
€ 7,00
€ 1,40 tk (pakis 5) (ilma käibemaksuta)
€ 8,68
€ 1,736 tk (pakis 5) (koos käibemaksuga)
Lao andmed ajutiselt ei ole saadaval.
Standard
5
Lao andmed ajutiselt ei ole saadaval.
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
105 A
Maximum Drain Source Voltage
60 V
Series
TK
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
5.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.45mm
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.16mm
Typical Gate Charge @ Vgs
46 nC @ 10 V
Height
15.1mm
Toote üksikasjad