Tehnilised dokumendid
Spetsifikatsioonid:
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
72 A
Maximum Drain Source Voltage
80 V
Series
TK
Package Type
TO-220SIS
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
4.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
10mm
Typical Gate Charge @ Vgs
81 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
4.5mm
Transistor Material
Si
Height
15mm
Päritoluriik
China
Toote üksikasjad
MOSFET N-Channel, TK6 & TK7 Series, Toshiba
MOSFET Transistors, Toshiba
€ 6,25
€ 1,25 tk (pakis 5) (ilma käibemaksuta)
€ 7,63
€ 1,525 tk (pakis 5) (koos käibemaksuga)
5
€ 6,25
€ 1,25 tk (pakis 5) (ilma käibemaksuta)
€ 7,63
€ 1,525 tk (pakis 5) (koos käibemaksuga)
5
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
kogus | Ühikuhind | Per Pakend |
---|---|---|
5 - 20 | € 1,25 | € 6,25 |
25 - 95 | € 1,10 | € 5,50 |
100 - 245 | € 0,979 | € 4,90 |
250 - 495 | € 0,933 | € 4,66 |
500+ | € 0,907 | € 4,54 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
72 A
Maximum Drain Source Voltage
80 V
Series
TK
Package Type
TO-220SIS
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
4.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
10mm
Typical Gate Charge @ Vgs
81 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
4.5mm
Transistor Material
Si
Height
15mm
Päritoluriik
China
Toote üksikasjad