N-Channel MOSFET, 8 A, 600 V, 3-Pin DPAK Toshiba TK8P60W5,RVQ(S

RS tootekood: 133-2804Bränd: ToshibaTootja Part nr.: TK8P60W5,RVQ(S
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Kuva kõik kategoorias MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

8 A

Maximum Drain Source Voltage

600 V

Package Type

DPAK (TO-252)

Series

DTMOSIV

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

560 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

80 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

6.6mm

Typical Gate Charge @ Vgs

22 nC @ 10 V

Width

6.1mm

Number of Elements per Chip

1

Height

2.3mm

Forward Diode Voltage

1.7V

Päritoluriik

Japan

Toote üksikasjad

MOSFET N-channel, TK8 & TK9 Series, Toshiba

MOSFET Transistors, Toshiba

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€ 11,50

€ 1,15 tk (pakis 10) (ilma käibemaksuta)

€ 14,03

€ 1,403 tk (pakis 10) (koos käibemaksuga)

N-Channel MOSFET, 8 A, 600 V, 3-Pin DPAK Toshiba TK8P60W5,RVQ(S

€ 11,50

€ 1,15 tk (pakis 10) (ilma käibemaksuta)

€ 14,03

€ 1,403 tk (pakis 10) (koos käibemaksuga)

N-Channel MOSFET, 8 A, 600 V, 3-Pin DPAK Toshiba TK8P60W5,RVQ(S
Lao andmed ajutiselt ei ole saadaval.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

8 A

Maximum Drain Source Voltage

600 V

Package Type

DPAK (TO-252)

Series

DTMOSIV

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

560 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

80 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

6.6mm

Typical Gate Charge @ Vgs

22 nC @ 10 V

Width

6.1mm

Number of Elements per Chip

1

Height

2.3mm

Forward Diode Voltage

1.7V

Päritoluriik

Japan

Toote üksikasjad

MOSFET N-channel, TK8 & TK9 Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more