Tehnilised dokumendid
Spetsifikatsioonid:
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
9 A
Maximum Drain Source Voltage
900 V
Package Type
TO-3PN
Series
TK
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.3 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
250 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Length
15.5mm
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
46 nC @ 10 V
Number of Elements per Chip
1
Width
4.5mm
Height
20mm
Päritoluriik
Japan
Toote üksikasjad
MOSFET N-channel, TK8 & TK9 Series, Toshiba
MOSFET Transistors, Toshiba
€ 86,25
€ 3,45 tk (torus 25) (ilma käibemaksuta)
€ 105,23
€ 4,209 tk (torus 25) (koos käibemaksuga)
25
€ 86,25
€ 3,45 tk (torus 25) (ilma käibemaksuta)
€ 105,23
€ 4,209 tk (torus 25) (koos käibemaksuga)
25
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
9 A
Maximum Drain Source Voltage
900 V
Package Type
TO-3PN
Series
TK
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.3 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
250 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Length
15.5mm
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
46 nC @ 10 V
Number of Elements per Chip
1
Width
4.5mm
Height
20mm
Päritoluriik
Japan
Toote üksikasjad