Toshiba TPC P-Channel MOSFET, 10 A, 30 V, 8-Pin SOP TPC8125

RS tootekood: 796-5115Bränd: ToshibaTootja Part nr.: TPC8125
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Kuva kõik kategoorias MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Toshiba

Channel Type

P

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

30 V

Series

TPC

Package Type

SOP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

17 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Maximum Power Dissipation

1.9 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +20 V

Width

3.9mm

Transistor Material

Si

Number of Elements per Chip

1

Length

4.9mm

Typical Gate Charge @ Vgs

64 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1.52mm

Toote üksikasjad

MOSFET P-Channel, TPC Series, Toshiba

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Lao andmed ajutiselt ei ole saadaval.

€ 3,44

€ 0,688 tk (pakis 5) (ilma käibemaksuta)

€ 4,20

€ 0,839 tk (pakis 5) (koos käibemaksuga)

Toshiba TPC P-Channel MOSFET, 10 A, 30 V, 8-Pin SOP TPC8125
Valige pakendi tüüp

€ 3,44

€ 0,688 tk (pakis 5) (ilma käibemaksuta)

€ 4,20

€ 0,839 tk (pakis 5) (koos käibemaksuga)

Toshiba TPC P-Channel MOSFET, 10 A, 30 V, 8-Pin SOP TPC8125
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

Lao andmed ajutiselt ei ole saadaval.

Palun kontrollige hiljem uuesti.

kogusÜhikuhindPer Pakend
5 - 45€ 0,688€ 3,44
50 - 495€ 0,651€ 3,26
500 - 2495€ 0,619€ 3,10
2500 - 4995€ 0,552€ 2,76
5000+€ 0,518€ 2,59

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
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Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Toshiba

Channel Type

P

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

30 V

Series

TPC

Package Type

SOP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

17 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Maximum Power Dissipation

1.9 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +20 V

Width

3.9mm

Transistor Material

Si

Number of Elements per Chip

1

Length

4.9mm

Typical Gate Charge @ Vgs

64 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1.52mm

Toote üksikasjad

MOSFET P-Channel, TPC Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more