Tehnilised dokumendid
Spetsifikatsioonid:
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
393 A
Maximum Drain Source Voltage
30 V
Package Type
SOP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
890 μΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
170 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
5mm
Width
5mm
Typical Gate Charge @ Vgs
110 nC @ 10 V
Forward Diode Voltage
1.2V
Height
0.95mm
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 0,892
tk (rullis 5000) (ilma käibemaksuta)
€ 1,088
tk (rullis 5000) (koos käibemaksuga)
5000
€ 0,892
tk (rullis 5000) (ilma käibemaksuta)
€ 1,088
tk (rullis 5000) (koos käibemaksuga)
5000
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
393 A
Maximum Drain Source Voltage
30 V
Package Type
SOP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
890 μΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
170 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
5mm
Width
5mm
Typical Gate Charge @ Vgs
110 nC @ 10 V
Forward Diode Voltage
1.2V
Height
0.95mm