Tehnilised dokumendid
Spetsifikatsioonid:
Brand
ToshibaTransistor Type
PNP
Maximum Continuous Collector Current
7 A
Maximum Collector Emitter Voltage
100 V
Maximum Emitter Base Voltage
6 V
Package Type
TO-220SIS
Mounting Type
Through Hole
Pin Count
3
Configuration
Single
Number of Elements per Chip
2
Minimum DC Current Gain
1000
Maximum Base Emitter Saturation Voltage
2 V
Maximum Collector Base Voltage
120 V
Maximum Collector Emitter Saturation Voltage
2 V
Maximum Collector Cut-off Current
2µA
Height
15mm
Width
4.5mm
Maximum Power Dissipation
25 W @ 25 °C
Dimensions
10 x 4.5 x 15mm
Maximum Operating Temperature
+150 °C
Length
100mm
Base Current
0.7A
Päritoluriik
Japan
Toote üksikasjad
NPN Darlington Transistors, Toshiba
Bipolar Transistors, Toshiba
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 0,636
tk (pakis 10) (ilma käibemaksuta)
€ 0,776
tk (pakis 10) (koos käibemaksuga)
10
€ 0,636
tk (pakis 10) (ilma käibemaksuta)
€ 0,776
tk (pakis 10) (koos käibemaksuga)
10
Osta lahtiselt
kogus | Ühikuhind | Per Pakend |
---|---|---|
10 - 20 | € 0,636 | € 6,36 |
30+ | € 0,562 | € 5,62 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
ToshibaTransistor Type
PNP
Maximum Continuous Collector Current
7 A
Maximum Collector Emitter Voltage
100 V
Maximum Emitter Base Voltage
6 V
Package Type
TO-220SIS
Mounting Type
Through Hole
Pin Count
3
Configuration
Single
Number of Elements per Chip
2
Minimum DC Current Gain
1000
Maximum Base Emitter Saturation Voltage
2 V
Maximum Collector Base Voltage
120 V
Maximum Collector Emitter Saturation Voltage
2 V
Maximum Collector Cut-off Current
2µA
Height
15mm
Width
4.5mm
Maximum Power Dissipation
25 W @ 25 °C
Dimensions
10 x 4.5 x 15mm
Maximum Operating Temperature
+150 °C
Length
100mm
Base Current
0.7A
Päritoluriik
Japan
Toote üksikasjad