Technical Document
Specifications
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
5.5 A
Maximum Drain Source Voltage
400 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
74 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.52mm
Typical Gate Charge @ Vgs
22 nC @ 10 V
Width
4.7mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.6V
Height
15.85mm
Country of Origin
China
€ 60.00
€ 1.20 Each (In a Pack of 50) (Exc. Vat)
€ 74.40
€ 1.488 Each (In a Pack of 50) (inc. VAT)
50
€ 60.00
€ 1.20 Each (In a Pack of 50) (Exc. Vat)
€ 74.40
€ 1.488 Each (In a Pack of 50) (inc. VAT)
Stock information temporarily unavailable.
50
Stock information temporarily unavailable.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 50 - 50 | € 1.20 | € 60.00 |
| 100 - 200 | € 0.927 | € 46.35 |
| 250 - 450 | € 0.868 | € 43.40 |
| 500+ | € 0.809 | € 40.45 |
Technical Document
Specifications
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
5.5 A
Maximum Drain Source Voltage
400 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
74 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.52mm
Typical Gate Charge @ Vgs
22 nC @ 10 V
Width
4.7mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.6V
Height
15.85mm
Country of Origin
China


