Tehnilised dokumendid
Spetsifikatsioonid:
Brand
Vishay SiliconixChannel Type
P
Maximum Continuous Drain Current
3.6 A
Maximum Drain Source Voltage
40 V
Series
TrenchFET
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
1.4mm
Length
3.04mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
12.5 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Height
1.02mm
Forward Diode Voltage
1.2V
Minimum Operating Temperature
-55 °C
Päritoluriik
China
€ 504,00
€ 0,168 tk (rullis 3000) (ilma käibemaksuta)
€ 614,88
€ 0,205 tk (rullis 3000) (koos käibemaksuga)
3000
€ 504,00
€ 0,168 tk (rullis 3000) (ilma käibemaksuta)
€ 614,88
€ 0,205 tk (rullis 3000) (koos käibemaksuga)
3000
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
Vishay SiliconixChannel Type
P
Maximum Continuous Drain Current
3.6 A
Maximum Drain Source Voltage
40 V
Series
TrenchFET
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
1.4mm
Length
3.04mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
12.5 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Height
1.02mm
Forward Diode Voltage
1.2V
Minimum Operating Temperature
-55 °C
Päritoluriik
China