Dual N-Channel MOSFET, 60 A, 30 V, 8-Pin PowerPAK SO-8 Vishay Siliconix SIRC06DP-T1-GE3
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
30 V
Series
TrenchFET
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
50 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +20 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Width
5mm
Transistor Material
Si
Length
5.99mm
Typical Gate Charge @ Vgs
38.5 nC @ 10 V
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
0.7V
Height
1.07mm
Päritoluriik
China
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 0,321
tk (rullis 3000) (ilma käibemaksuta)
€ 0,392
tk (rullis 3000) (koos käibemaksuga)
3000
€ 0,321
tk (rullis 3000) (ilma käibemaksuta)
€ 0,392
tk (rullis 3000) (koos käibemaksuga)
3000
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
30 V
Series
TrenchFET
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
50 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +20 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Width
5mm
Transistor Material
Si
Length
5.99mm
Typical Gate Charge @ Vgs
38.5 nC @ 10 V
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
0.7V
Height
1.07mm
Päritoluriik
China
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products