N-Channel MOSFET, 14.2 A, 100 V, 8-Pin PowerPAK 1212-8 Vishay Siliconix SiS110DN-T1-GE3

RS tootekood: 178-3962Bränd: Vishay SiliconixTootja Part nr.: SiS110DN-T1-GE3
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Kuva kõik kategoorias MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay Siliconix

Channel Type

N

Maximum Continuous Drain Current

14.2 A

Maximum Drain Source Voltage

100 V

Series

TrenchFET

Package Type

PowerPAK 1212-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

70 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

4V

Maximum Power Dissipation

24 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

3.15mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

3.15mm

Typical Gate Charge @ Vgs

8.5 nC @ 10 V

Height

1.07mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Päritoluriik

China

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Lao andmed ajutiselt ei ole saadaval.

Palun kontrollige hiljem uuesti.

Lao andmed ajutiselt ei ole saadaval.

€ 5,80

€ 0,232 tk (pakis 25) (ilma käibemaksuta)

€ 7,08

€ 0,283 tk (pakis 25) (koos käibemaksuga)

N-Channel MOSFET, 14.2 A, 100 V, 8-Pin PowerPAK 1212-8 Vishay Siliconix SiS110DN-T1-GE3
Valige pakendi tüüp

Standard

Valige pakendi tüüp

Standard - each

Saadaval mitmekordselt 25.

Tootmine -

Saadaval mitmekordselt 25.

Soovitatav suurte koguste tellimuste korral. Tooted on pakendatud masinatesse sisestamiseks, mis võimaldab teil parandada tootmise efektiivsust.

25

Saadaval mitmekordselt 25
25€ 5,80
50€ 11,60
75€ 17,40
100€ 23,20
125€ 29,00
150€ 34,80
175€ 40,60
200€ 46,40
225€ 52,20
250€ 58,00
275€ 63,80
300€ 69,60
325€ 75,40
350€ 81,20
375€ 87,00

€ 5,80

€ 0,232 tk (pakis 25) (ilma käibemaksuta)

€ 7,08

€ 0,283 tk (pakis 25) (koos käibemaksuga)

N-Channel MOSFET, 14.2 A, 100 V, 8-Pin PowerPAK 1212-8 Vishay Siliconix SiS110DN-T1-GE3
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

Standard

Valige pakendi tüüp

Standard - each

Saadaval mitmekordselt 25.

Tootmine -

Saadaval mitmekordselt 25.

Soovitatav suurte koguste tellimuste korral. Tooted on pakendatud masinatesse sisestamiseks, mis võimaldab teil parandada tootmise efektiivsust.

25

Saadaval mitmekordselt 25
25€ 5,80
50€ 11,60
75€ 17,40
100€ 23,20
125€ 29,00
150€ 34,80
175€ 40,60
200€ 46,40
225€ 52,20
250€ 58,00
275€ 63,80
300€ 69,60
325€ 75,40
350€ 81,20
375€ 87,00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay Siliconix

Channel Type

N

Maximum Continuous Drain Current

14.2 A

Maximum Drain Source Voltage

100 V

Series

TrenchFET

Package Type

PowerPAK 1212-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

70 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

4V

Maximum Power Dissipation

24 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

3.15mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

3.15mm

Typical Gate Charge @ Vgs

8.5 nC @ 10 V

Height

1.07mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Päritoluriik

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more