Vishay Siliconix TrenchFET N-Channel MOSFET, 14.2 A, 100 V, 8-Pin PowerPAK 1212-8 SiS110DN-T1-GE3
Technical Document
Specifications
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
14.2 A
Maximum Drain Source Voltage
100 V
Series
TrenchFET
Package Type
PowerPAK 1212-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
70 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
4V
Maximum Power Dissipation
24 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Length
3.15mm
Typical Gate Charge @ Vgs
8.5 nC @ 10 V
Number of Elements per Chip
1
Width
3.15mm
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Height
1.07mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Country of Origin
China
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 10.82
€ 0.433 Each (In a Pack of 25) (Exc. Vat)
€ 13.42
€ 0.537 Each (In a Pack of 25) (inc. VAT)
Standard
25
€ 10.82
€ 0.433 Each (In a Pack of 25) (Exc. Vat)
€ 13.42
€ 0.537 Each (In a Pack of 25) (inc. VAT)
Stock information temporarily unavailable.
Standard
25
Stock information temporarily unavailable.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
14.2 A
Maximum Drain Source Voltage
100 V
Series
TrenchFET
Package Type
PowerPAK 1212-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
70 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
4V
Maximum Power Dissipation
24 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Length
3.15mm
Typical Gate Charge @ Vgs
8.5 nC @ 10 V
Number of Elements per Chip
1
Width
3.15mm
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Height
1.07mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Country of Origin
China
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products